Output Characteristics (Enhancement Mode)
HEMT turns back ON when drain goes below G, S
APEC 2015 Seminar S17
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Ref: Jones, E.A.; Wang, F.; Ozpineci, B., "Application-based review of GaN HFETs," Wide Bandgap Power Devices and
Applications (WiPDA) 2014, pp.24-29, 13-15 Oct. 2014
