Die-on-die cascode construction
Minimizes parasitic impedance between HEMT and FET
– Faster switching transitions, less ringing and overshoot
APEC 2015 Seminar S17
33
US Pat. No. 8,847,408
GaN on Si
HEMT die
LV Si MOSFET mounted on
Source pad of GaN on Si die
D
S
G
Low Voltage
Si MOSFET
Depletion-Mode
GaN HEMT