Comparing GaN cascode to superjunction
1
st
Generation GaN cascode
APEC 2015 Seminar S17
29
Parameter
GaN
cascode
Equivalent
SJ
Package
6x8 mm PQFN
8x8 mm
PQFN
GaN 25% smaller package
Vdss
600 V
650 V
Rdson
typ 25°C
135 m
Ω
115 m
Ω
Rdson
typ 125°C
225 m
Ω
230
mΩ
GaN
1.67x; SJ 2x
Qg
(10V Vgs, 480V Vds)
8.8
nC
35
nC
GaN ~4X lower than SJ
Qrr
(100A/µs, 25°C)
49
nC
6,400
nC
GaN >100X lower than SJ
Coss
(400V)
47 pF
53
- 579 pF
Energy
vs time equivalent
R
θ J-C (°C/W)
1.65
1.22
Consistent with package