GaN High Electron Mobility Transistor (HEMT)
Depletion-mode (normally-on) HEMT
Si substrate for low cost
Normally-on potential problem for power electronics
APEC 2015 Seminar S17
24
Ref: Jones, E.A.; Wang, F.; Ozpineci, B., "Application-based review of GaN HFETs," Wide Bandgap Power Devices and
Applications (WiPDA) 2014, pp.24-29, 13-15 Oct. 2014