Datasheet

POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 Email: [e-mail]
 2008 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig.5 Maximum forward current at
case temperature
Fig. 4 Power dissipation versus direct output
current and ambient temperature
Fig. 3 ∫i
2
dt versus time (1-10ms)
per diode (or thyristor)
Fig. 2 Surge overload current per
diode I
FSM
: Crest value. t: duration
Fig. 1 Forward current versus
voltage drop per diode
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
T = 150°C
vj
T = 25°C
vj
2
0.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.01 0.1
1
1
0
0.5
1
1.5
2
K/W
Z
th
t
[
s
]
Z
t
h
J
K
Z
t
h
J
C
S
PSDS 82