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v2.00
1 1.5
0
5
10
15
20
25
30
I
F
V
F
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
380 340
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
2
3
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
Fig. 3
∫
i
2
dt versus time
(1-10ms) per diode (or thyristor)
20
0
10
20
30
40
50
60
55
60
65
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
8.45
3.45
1.78
0.95
0.530.12 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50 100 150 200
0
10
20
30
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case temperature
0.01 0.1 1 10
2
4
6
8
10
12
K/W
Z
th
t[s]
Z
thJK
Z
thJC
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
PSD 25T
PSD 25TN