Datasheet

Three Phase
Rectifier Bridge
PSD 25MT
PSD 25MTN
Preliminary Data Sheet
I
dAVM
= 25 A
V
RRM
= 200 V to 1000 V
V
RSM
V
V
RRM
V
Type Number
Gold-plated
terminals
Nickel-plated
terminals
200 200 PSD 25MT/02 PSD 25MTN/02
400 400 PSD 25MT/04 PSD 25MTN/04
600 600 PSD 25MT/06 PSD 25MTN/06
800 800 PSD 25MT/08 PSD 25MTN/08
1000 1000 PSD 25MT/10 PSD 25MTN/10
Symbol Test Conditions Maximum Ratings
I
dAVM
T
c
= 62˚C per module 25 A
I
FSM
T
vj
= 45˚C, V
R
= 0 V t = 10 ms 50 Hz, sine 230 A
T
vj
= T
vjm
, V
R
= 0 V t = 10 ms 50 Hz, sine 200 A
∫i
2
dt T
vj
= 45˚C, V
R
= 0 V t = 10 ms 50 Hz, sine 520 A
2
s
T
vj
-40 ... +150 ˚C
T
vjm
150 ˚C
T
stg
-40 ... +150 ˚C
V
isol
50/60 Hz, RMS t = 1 min 2500 V~
I
isol
≤ 1mA t = 1 s 3000 V~
M
d
Mounting torque (M5) 2±10% Nm
(10-32 UNF) 18±10% lb in
Weight typ. 22 g
Symbol Test Conditions Characteristic Value
I
R
V
R
= V
RRM
T
vj
= 25˚C ≤ 0.3 mA
V
R
= V
RRM
T
vj
= T
vjm
≤ 2.0 mA
V
F
I
F
= 150 A T
vj
= 25˚C ≤ 2.2 V
V
TO
For power-loss calculations only 0.85 V
r
T
T
vj
= T
vjm
12 mΩ
R
th(j-c)
per diode; DC current 9.3 K/W
per module 1.55 K/W
R
th(j-s)
per diode; DC current 10.2 K/W
per module 1.7 K/W
d
S
Creeping distance on surface 12.7 mm
d
A
Creeping distance on air 9.4 mm
a Maximum allowable acceleration 50 m/s
2
~
~
~
Features
• ¼” gold- or nickel-plated FASTON
terminals
• Isolation voltage 3000 V~
• Mesa glass-passivated chips
• Blocking voltage up to 1000 V
• Low forward voltage drop
• UL registered E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverters
• Battery DC power supplies
Advantages
• Easy to mount with one screw
• Space and weight savings
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refers to a single diode unless otherwise stated
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©2012 POWERSEM reserves the right to change limits, test conditions and dimensions
v2.00