Datasheet

PSD 112
POWERSEM GmbH, Walpersdorfer Str. 53

2005 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
1.0
1.5
2.0 0.5
0
50
100
150
200
250
300
V
F
[V]
I
F
[A]
T
VJ
= 150°C
T
VJ
= 25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
900 780
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
3
4
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
Fig. 3 ∫i
2
dt versus time
(1-10ms) per diode
10050
0
50
100
150
200
250
300
350
400
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.34
0.59
0.34
0.22
0.15 0.09 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSD 112
Fig. 4 Power dissipation versus direct output current and ambient
tem
p
erature
50 100 150 200
0
50
90
110
130
DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case tem
p
erature
0.01 0.1 1 10
0.2
0.4
0.6
0.8
1
1.2
K/W
Z
th
t[s]
Z
thJK
Z
thJC
Fig. 6 Transient thermal impedance per diode