VNH5019A-E datasheet
Table Of Contents
- 1 Block diagram and pin description
- 2 Electrical specifications
- Figure 3. Current and voltage conventions
- 2.1 Absolute maximum ratings
- 2.2 Thermal data
- 2.3 Electrical characteristics
- 2.4 Waveforms and truth table
- Table 11. Truth table in normal operating conditions
- Figure 4. Typical application circuit for DC to 20 kHz PWM operation with reverse battery protection (option A)
- Figure 5. Typical application circuit for DC to 20 kHz PWM operation with reverse battery protection (option B)
- Table 12. Truth table in fault conditions (detected on OUTA)
- Figure 6. Behavior in fault condition (how a fault can be cleared)
- Table 13. Electrical transient requirements (part 1)
- Table 14. Electrical transient requirements (part 2)
- Table 15. Electrical transient requirements (part 3)
- 2.5 Reverse battery protection
- Figure 7. Definition of the delay times measurement
- Figure 8. Definition of the low-side switching times
- Figure 9. Definition of the high-side switching times
- Figure 10. Definition of dynamic cross conduction current during a PWM operation
- Figure 11. Waveforms in full bridge operation (part 1)
- Figure 12. Waveforms in full bridge operation (part 2)
- Figure 13. Definition of delay response time of sense current
- Figure 14. Half-bridge configuration
- Figure 15. Multi-motors configuration
- 3 Package and PCB thermal data
- 3.1 MultiPowerSO-30 thermal data
- 4 Package and packing information
- 5 Order codes
- 6 Revision history
Electrical specifications VNH5019A-E
18/34 Doc ID 15701 Rev 7
2.5 Reverse battery protection
Against reverse battery condition the charge pump feature allows to use an external
N-channel MOSFET connected as shown in the typical application circuit (see Figure 4).
As alternative option, a N-channel MOSFET connected to GND pin can be used (see typical
application circuit in figure Figure 5).
With this configuration we recommend to short V
BAT
pin to V
CC
.
The device sustains no more than -30 A in reverse battery conditions because of the two
body diodes of the Power MOSFETs. Additionally, in reverse battery condition the I/Os of
VNH5019A-E is pulled-down to the V
CC
line (approximately -1.5 V). Series resistor must be
inserted to limit the current sunk from the microcontroller I/Os. If I
Rmax
is the maximum
target reverse current through microcontroller I/Os, series resistor is:
Figure 7. Definition of the delay times measurement
t
t
V
INB
V
INA,
t
PWM
t
I
LOAD
t
DEL
t
DEL