VNH5019A-E datasheet

VNH5019A-E Electrical specifications
Doc ID 15701 Rev 7 11/34
V
ICL
Input clamp voltage
I
IN
= 1 mA 5.5 6.3 7.5
V
I
IN
= -1 mA -1.0 -0.7 -0.3
V
DIAG
Enable low-level
output voltage
Fault operation (DIAG
X
/EN
X
pin
acts as an output pin); I
EN
= 1 mA
0.4 V
Table 7. Switching (V
CC
= 13 V, R
LOAD
= 0.87 Ω, Tj = 25 °C)
Symbol Parameter Test conditions Min Typ Max Unit
f PWM frequency 0 20 kHz
t
d(on)
HSD rise time
Input rise time < 1µs
(see Figure 9)
250 µs
t
d(off)
HSD fall time
Input rise time < 1µs
(see Figure 9)
250 µs
t
r
LSD rise time (see Figure 8)12µs
t
f
LSD fall time (see Figure 8)12µs
t
DEL
Delay time during change of
operating mode
(see Figure 7) 200 400 1600 µs
t
rr
High-side free wheeling
diode reverse recovery time
(see Figure 10) 110 ns
I
RM
Dynamic cross-conduction
current
I
OUT
= 15 A
(see Figure 10)
2A
Table 8. Protection and diagnostic
Symbol Parameter Test conditions Min Typ Max Unit
V
USD
V
CC
undervoltage
shutdown
4.5 5.5 V
V
USDhyst
V
CC
undervoltage
shutdown hysteresis
0.5 V
V
OV
V
CC
overvoltage shutdown 24 27 30 V
I
LIM_H
High-side current limitation 30 50 70 A
I
SD_LS
Low-side shutdown current 70 115 160 A
V
CLPHS
(1)
High-side clamp voltage
(V
CC
to OUT
A
= 0 or
OUT
B
= 0)
I
OUT
= 15 A 43 48 54 V
V
CLPLS
(1)
Low-side clamp voltage
(OUT
A
= V
CC
or
OUT
B
= V
CC
to GND)
I
OUT
= 15 A 27 30 33 V
T
TSD
Thermal shutdown
temperature
V
IN
= 2.1 V 150 175 200 °C
Table 6. Logic inputs (IN
A
, IN
B
, EN
A
, EN
B,
PWM, CS_DIS) (continued)
Symbol Parameter Test conditions Min. Typ. Max. Unit