User Manual

01-Jan-2008 Rev. B

Page 7 of 7

h tp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

P-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

Elektronische Bauelemente

SSG4505

N Channel 10A, 30V,RDS(ON) 14m

Enhancement Mode Power Mos.FET

P Channel -8.4A, -30V,RDS(ON) 20m