User Manual

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

01-Jan-2008 Rev. B

Page 6 of 7

tage does not sag below the minimum dropout voltage during the load

V higher than Vout in order for the device to

Description

GND

Typically a large storage capacitor is connected from this pin to ground to insure that the input

1.3V

or open= output enable.

P-Channel

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristics of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

Elektronische Bauelemente

SSG4505

N Channel 10A, 30V,RDS(ON) 14m

Enhancement Mode Power Mos.FET

P Channel -8.4A, -30V,RDS(ON) 20m