User Manual



01-Jan-2008 Rev. B

Page 5 of 7

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual

N-Channel

Fig 10. Effective Transient Thermal ImpedanceFig 9. Maximum Safe Operating Area

Fig 8. Typical Capacitance CharacteristicsFig 7. Gate Charge Characteristics

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

Elektronische Bauelemente

SSG4505

N Channel 10A, 30V,RDS(ON) 14m

Enhancement Mode Power Mos.FET

P Channel -8.4A, -30V,RDS(ON) 20m