User Manual

01-Jan-2008 Rev. B

Page 4 of 7

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Characteristics Curve N-Channel

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Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

Fig 5. Forward Characteristics of

Reverse Diode

Elektronische Bauelemente

SSG4505

N Channel 10A, 30V,RDS(ON) 14m

Enhancement Mode Power Mos.FET

P Channel -8.4A, -30V,RDS(ON) 20m