User Manual

Elektronische Bauelemente
SSG4505
N Channel 10A, 30V,RDS(ON) 14m
Enhancement Mode Power Mos.FET
Description
The SSG4505 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Features
* Simple Drive Requirement
* Lower On-Resistance
P Channel -8.4A, -30V,RDS(ON) 20m
Ω
Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
0.25
Dimensions in millimeters
6.20
5.80
1.27Typ.
0.35
0.49
4.80
5.00
0
0.10~0.25
1.35
1.75
0.40
0.90
0.19
0.25
3.80
4.00
0.375 REF
o
8
o
45
o
S1 G1 S2 G2
D1 D1 D2 D2
4505SS
Date Code
1
5
7
8
2
3
4
6
SOP-8
* Fast Switching Performance
01-Jan-2008 Rev. B
Page 1 of 7
The SOP-8 package is universally preferred for all commercial
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
D1
G1
G2
S1
D2
S2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage
Gate-Source Voltage
10
7.9 -6.7
3 3
-8.4
0 - 0
30
20
-30
20± ±
Thermal Resistance Junction-ambient
A
V
V
A
A
ID@TA=7
0
/W C
W / C
C
W
VDS
VGS
ID@TA=25
IDM
PD@TA=25
Tj, Tstg
Rthj-a
2.0
0.016
-55~+150
62.5
3
3
1
o
o
o
C
o
C
o
3
Max.
Absolute Maximum Ratings
C
o
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Parameter Symbol
Ratings
Unit
Thermal Data
Parameter
Symbol Ratings Unit
RoHS Compliant Product