INTEGRATED CIRCUITS TDA5360 Pre–Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads Objective specification, Revision 2.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 1 FEATURES 2 APPLICATIONS 3 QUICK REFERENCE DATA 4 DESCRIPTION 5 ORDERING INFORMATION 6 BLOCK DIAGRAM 7 PINOUT DIAGRAM 8 PIN DESCRIPTIONS 9 FUNCTIONAL DESCRIPTION 9.1 ACTIVE READ MODE 9.2 ACTIVE WRITE MODE 9.3 ACTIVE STW MODE 9.4 STANDBY MODE 9.5 SLEEP MODE 10 BIASING OFTHE MR ELEMENT 10.1 MR HEAD RESISTANCE AND TEMPERATURE MEASUREMENT 10.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 1 TDA5360 FEATURES • 12 channels design for Single-stripe (SAL and GMR) Read / Thin-film Write heads. • Design target 350 Mbps, for d=0 (16 / 17) rate code. • Differential Hybrid sense Reader architecture. • MR element biased by direct programmable constant Power or constant Current. • Voltage driven Writer architecture.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 3 TDA5360 QUICK REFERENCE DATA SYMBOL VCC PARAMETER CONDITIONS DC Supply voltage VEE MIN. TYP. MAX. UNIT +4.5 +5 +5.5 V -4.5 -5 -5.5 V 1.7 dB NF Noise Figure Note 3, Section 14 1.7 IRNV Input Referred Noise Voltage Rmr=66Ω; Imr=8mA; 10 MHz
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 4 TDA5360 DESCRIPTION The +/- 5.0 volt pre-amplifier for HDD described here has been designed for 12 terminals, comprised of a SAL or GMR magneto-resistive reader and an inductive thin film writer. In read mode, the device operates as a low noise differential preamplifier which senses resistance changes in the MR element that correspond to flux changes on the disk.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads RFE Av On/Off Av BUFFER TA handling Rin:2bits TA CORRECTOR hybrid sense HEADMUX BLOCK DIAGRAM RMR 6 TDA5360 + d/dt 3bits 1.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 7 TDA5360 PAD ARRANGEMENT DRN VEE WN8 WP8 RP8 RN8 RN9 RP9 WN9 WP9 WN10 WP10 RP10 RN10 RN11 RP11 WN11 SDATA WP11 WN7 BFAST SCLK WP7 RP7 SEN RN7 FLT WDP RN6 WDN VCC VCC VCC RP6 RWN WP6 SHIELDN WN6 RDN GND RDP SHIELDP GND CS0 WN5 REXT WP5 CS1 VCC RP5 VCC RN5 RN4 Fig.2 TDA5360 pad arrangement pads up.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 8 TDA5360 PAD DESCRIPTION SYMBOL Pin Description VCC +5V supply GND Ground VEE -5V supply RDP,RDN output Read Data, Differential read signal outputs RWN logic input Read/Write : read = HIGH, write = LOW WDP,WDN input Differential PECL or current mode write data input FLT output In Write mode, a fault is flagged when FLT is high.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 9 TDA5360 FUNCTIONAL DESCRIPTION 9.1 Active READ mode Taking RWN high and programming bits MODE0 and MODE1 (see Reg.09) selects the read mode. The Head select inputs, in serial register, select the appropriate head. In read mode, the circuit provides either a constant power bias or a constant current bias that flows from the P to the N side of the MR section of the head.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 9.2 TDA5360 Active WRITE mode Taking RWN low from an Active READ mode selects the Active WRITE mode. The head select inputs, in a serial register, select the appropriate head. In write mode the circuit acts as a current switch with write current toggled between the P and N directions of the thinfilm section of the selected head x.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 9.5 TDA5360 SLEEP mode The sleep mode is selected by programming bits MODE0 and MODE1. (see Reg.09) In Sleep Mode, the IC is accessible via the Serial Interface.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 10 BIASING OF THE MR ELEMENT This preamplifier has been designed for SAL and GMR elements. Programming bit GMR in Reg. 01 select either a SAL range (LOW) or a GMR range (HIGH). By programming bit PORI in Reg. 01, the user can program either a constant current bias (LOW) or a constant power bias (HIGH) for the MR element.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.2 TDA5360 Fault Mode Fault conditions are indicated on the FLT pin (HIGH during write mode and LOW during read mode). The fault condition is coded and stored in Reg. 07 for monitoring purposes. The fault code is cleared on power up, on system reset and on writing to Reg.09 The FLT output is an open collector to an external resistor of 5Kohms connected to +5V.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 The following are valid READ fault conditions which set FLT=LOW • Rext pin open or shorted to GND or Vcc • Thermal Asperity detected • Read Head open • Power supplies too low (VCC and/or VEE) • Write current present in read mode • Illegal head address ( i.e.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.5 TDA5360 Serial Interface Operations The serial interface communication consists of an adress word of 8 bits followed by a data word of 8 bits. See section 11, page 24 and 25 for timing diagrams. 10.5.1 SERIAL ADDRESSING When SEN goes HIGH, bits are latched-in at rising edges of SCLK.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 10.6 TDA5360 Registers description Nb Register Name Contents 0 Head Select Register HS3..HS0 = 0,0,0,0 to 1,0,1,1 = H0 to H11 SELT : if HIGH, the multiple selection detector is enabled.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 3 Reader Bandwith Register TDA5360 HFZ3, HFZ2, HFZ1, HFZ0 = high frequency gain boost/ differentiator control ( Note 3 ) LFP1, LFP0 = low frequency pole. (0,0) =1 MHz (0,1) =2 MHz (1,0) =3 MHz (1,1) =4 MHz 4 Writer Bias Register IW4, IW3, IW2, IW1, IW0 = 5 bits to define Iwr current : Iwr = 10mA + 1.3mA*(IW0+2*IW1+4*IW2+8*IW3+16*IW4) WCP2...
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 8 TDA5360 Measurement Register M4...M0 = 5 bits for Rmr/Temperature digitazation (read back only bits) RANGE1,RANGE0 = 2bits to define which measurement to be done (0,0) RMR measurement for 15Ω < Rmr < 46Ω Rmr = 698 / (15.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 Note 0 : MDS (Multiple Device Selected) detector : When several preamps are connected in parallel, this function allows the user detection of wrong adressing withing the preamps. When SELT is high, the selected preamp pull a precise current on FLT pin. If only one preamp has reacted, SELF is LOW.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 Formula to link real TAD threshold with LF pole of the reader and programmed input impedance : 0.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 - Temperature digitizer This measurement can be done either in Active Read mode or in Active Write mode.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 The aim of the TAC is to limit the amplitude and the duration of the perturbation seen at the reader output. Because thermal asperity amplitude is not constant, the TAC need some threshold programmation to define the sharpness of the response. note that reducing the TAC threshold also impact the Low corner frequency value of the read amplifier.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 11 SERIAL INTERFACE TIMING READ t > 5ns t > 5ns 1.5 Tclk SEN 2 Tclk 1 Tclk SCLK SDATA a0=1 a1 a2 a3 a4 Address a5 a6 d0 a7 d1 d2 d3 d4 d5 d6 d7 Data When Fclk > 20 MHz and a register reading is performed, it is necessary to extend the clock period as above When Fclk < 20 MHz, this is not necessary WRITE SEN 1 Tclk 0.
Philips Semiconductors Objective Specification, Revision 2.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 12 ELECTRICAL PARAMETERS 12.1 DC Characteristics Unless otherwise specified, recommended operating conditions apply CS0=CS1=LOW, DRN=HIGH, BFAST=LOW, STWn=HIGH, RIN=18 Ohm, LFP = 1MHz, Imr = 8mA, Rmr = 66 Ohm Iwr = 30.8mA. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT = 8mA 65 75 85 mA = 30.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 Voltage compliance for WDP and WDN in current mode CMM of the inputs in current mode 1.5 V CCTL V Fault Threshold Hysteresis=100mV +/- 10% 3.80 V EETL V Fault Threshold Hysteresis=100mV +/- 10% -4.20 12.2 CC EE Vcc -1.7 V 4.00 4.20 V -4.00 -3.80 V Read Characteristics Unless otherwise specified, recommended operating conditions apply.
Philips Semiconductors Objective Specification, Revision 2.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 12.3 TDA5360 Write Charateristics Unless otherwise specified, recommended operating conditions apply, IW=50mA, LH=75nH, RH = 10Ω, fDATA=5MHz, Ambient temperature. SYMBOL PARAMETERS IWR ∆IWR / IWR CONDITIONS MIN TYP MAX UNIT Write Current Range 10 30.8 50.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads 12.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 5. The noise figure is defined as : NF[dB] = 10xlog[(Vnout/Av)2 / (4kTxRMR)] where Av is the gain and Vnout is the noise voltage at the output of the amplifier 6. See Section 11 for Serial Interface timing diagrams 7.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 13 LIMITING VALUES / RECOMMENDED OPERATION CONDITIONS In accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. TYP MAX. UNIT VCC Positive Supply voltage range note1 4.5 5.0 5.5 V VEE Negative Supply voltage range note 2 -4.5 - 5.0 -5.5 V VIH High level CMOS input voltage 2.
Philips Semiconductors Objective Specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 Notes 1. A supply by-pass capacitor from VCC to ground or a low pass filter may be used to optimize the PSRR. 2. A supply by-pass capacitor from VEE to ground or a low pass filter may be used to optimize the PSRR 14 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER MIN. MAX. UNIT VCC Positive supply voltage -0.5 6.0 V VEE Negative supply voltage -6.0 0.
Philips Semiconductors Objective specification, Revision 2.2 Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads TDA5360 Data sheet status Data sheet status Product status Definition [1] Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.
