INTEGRATED CIRCUITS DATA SHEET TDA2611A 5 W audio power amplifier Product specification File under Integrated Circuits, IC01 November 1982
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A The TDA2611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage audio amplifier.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.1 Circuit diagram; pin 3 not connected. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Supply voltage VP max. 35 V Non-repetitive peak output current IOSM max. 3A Repetitive peak output current IORM max. 1,5 A Total power dissipation see derating curves Fig.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.2 Power derating curves. HEATSINK EXAMPLE Assume VP = 18 V; RL = 8 Ω; Tamb = 60 °C maximum; Tj = 150 °C (max. for a 4 W application into an 8 Ω load, the maximum dissipation is about 2,2 W). The thermal resistance from junction to ambient can be expressed as: 150 – 60 R th j-a = R th j-tab + R th tab-h + R th h-a = ---------------------- = 41 K/W.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A D.C. CHARACTERISTICS Supply voltage range VP Repetitive peak output current IORM Total quiescent current at VP = 18 V Itot 6 to 35 V < typ. 1,5 A 25 mA A.C. CHARACTERISTICS Tamb = 25 °C; VP = 18 V; RL = 8 Ω; f = 1 kHz unless otherwise specified; see also Fig. 3 A.F. output power at dtot = 10% VP = 18 V; RL = 8 Ω Po VP = 12 V; RL = 8 Ω VP = 8,3 V; RL = 8 Ω > 4W typ. 4,5 W Po typ. 1,7 W Po typ.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.3 Test circuit; pin 3 not connected. Fig.4 Total harmonic distortion as a function of output power.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.5 Output power as a function of supply voltage. Fig.6 November 1982 Input impedance as a function of frequency; curve a for C = 1 µF, R = 0 Ω; curve b for C = 1 µF, R = 1 kΩ; circuit of Fig. 3; C2 = 10 pF; typical values.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.7 Input impedance as a function of R in circuit of Fig. 3; C = 1 µF; f = 1 kHz. Fig.8 Total harmonic distortion as a function of RS in the circuit of Fig. 3; Po = 3,5 W; f = 1 kHz.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.9 Total power dissipation and efficiency as a function of output power.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A APPLICATION INFORMATION Fig.10 Ceramic pickup amplifier circuit. Fig.11 Total harmonic distortion as a function of output power; with tone control; − − − without tone control; in circuit of Fig. 10; typical values.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A Fig.12 Frequency characteristics of the circuit of Fig. 10; tone control max. high; − − − tone control min. high; Po relative to 0 dB = 3 W; typical values. Fig.13 Frequency characteristic of the circuit of Fig. 10; volume control at the top; tone control max. high.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A PACKAGE OUTLINE SIL9MPF: plastic single in-line medium power package with fin; 9 leads SOT110-1 D D1 q P A2 P1 A3 q1 q2 A A4 seating plane E pin 1 index c L 1 9 b e Z Q b2 w M b1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 max. A3 A4 b b1 b2 c D (1) D1 E (1) e L P P1 Q q q1 q2 w Z (1) max. mm 18.5 17.8 3.7 8.7 8.0 15.8 15.4 1.40 1.14 0.67 0.50 1.
Philips Semiconductors Product specification 5 W audio power amplifier TDA2611A The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages.
