Transimpedance Amplifier Specification Sheet

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SA5211

Transimpedance ampliﬁer (180 MHz)

Rev. 03 — 07 October 1998 Product speciﬁcation

1. Description

The SA5211 is a 28 kΩ transimpedance, wide-band, low noise ampliﬁer with

differential outputs, particularly suitable for signal recovery in ﬁber optic receivers.

The part is ideally suited for many other RF applications as a general purpose gain

block.

2. Features

■ Extremely low noise: 1.8 pA / √Hz

■ Single 5 V supply

■ Large bandwidth: 180 MHz

■ Differential outputs

■ Low input/output impedances

■ High power supply rejection ratio

■ 28 kΩ differential transresistance

3. Applications

■ Fiber optic receivers, analog and digital

■ Current-to-voltage converters

■ Wide-band gain block

■ Medical and scientiﬁc Instrumentation

■ Sensor preampliﬁers

■ Single-ended to differential conversion

■ Low noise RF ampliﬁers

■ RF signal processing

Summary of content (28 pages)

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SA5211 Transimpedance amplifier (180 MHz) Rev. 03 — 07 October 1998 Product specification 1. Description The SA5211 is a 28 kΩ transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. 2. Features ■ ■ ■ ■ ■ ■ ■ Extremely low noise: 1.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 4. Pinning information 4.1 Pinning D Package GND2 1 14 OUT (–) GND2 2 13 GND2 NC 3 12 OUT (+) IIN 4 11 GND1 NC 5 10 GND1 VCC1 6 9 GND1 VCC2 7 8 GND1 TOP VIEW SD00318 Fig 1. Pin configuration. 5. Ordering information Table 1: Ordering information Type number SA5211D Package Name Description Version Temperature range (°C) SO14 plastic small outline package; 14 leads; body width 3.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Table 3: Recommended operating conditions Symbol Parameter Conditions Min Max Unit VCC supply voltage 4.5 5.5 V Tamb ambient temperature range -40 +85 °C TJ junction temperature range -40 +105 °C 7. Static characteristics Table 4: DC electrical characteristics Min and Max limits apply over operating temperature range at VCC = 5 V, unless otherwise specified. Typical data apply at VCC = 5 V and Tamb = 25 °C.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Table 5: AC electrical characteristics…continued Typical data and Min and Max limits apply at VCC = 5 V and Tamb = 25 °C Symbol Test conditions Min Typ Max Unit In CS = 0 [1] ∆f = 50 MHz ∆f = 100 MHz ∆f = 200 MHz − − − 13 20 35 − − − nA In CS = 1pF ∆f = 50 MHz ∆f = 100 MHz ∆f = 200 MHz − − − 13 21 41 − − − nA PSRR power supply rejection ratio [2] (VCC1 = VCC2) DC tested, ∆VCC = 0.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 9. Test circuits SINGLE-ENDED DIFFERENTIAL NETWORK ANALYZER RT ≈ S-PARAMETER TEST SET PORT 1 VOUT R = 2 × S21 × R VIN RO ≈ ZO PORT 2 1 – S22 – 33 1 + S22 RT = VOUT R = 4 × S21 × R VIN RO = 2ZO 1 – S22 – 66 1 + S22 5V VCC1 0.1µF ZO = 50 VCC2 OUT 33 0.1µF ZO = 50 R = 1k IN DUT 33 0.1µF OUT RL = 50 50 GND1 GND2 Test Circuit 1 SPECTRUM ANALYZER 5V VCC1 OUT NC IN AV = 60DB VCC2 33 DUT 33 0.1µF ZO = 50 0.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) NETWORK ANALYZER 5V 10µF S-PARAMETER TEST SET 0.1µF PORT 1 PORT 2 CURRENT PROBE 1mV/mA 10µF 0.1µF 16 VCC1 CAL VCC2 33 0.1µF OUT 50 100 BAL. IN 33 TRANSFORMER NH0300HB TEST UNBAL. OUT 0.1µF GND1 GND2 Test Circuit 3 NETWORK ANALYZER 5V 10µF S-PARAMETER TEST SET 0.1µF PORT 1 CURRENT PROBE 1mV/mA 10µF 0.1µF 5V PORT 2 16 VCC2 10µF CAL VCC1 33 0.1µF OUT 0.1µF IN 50 100 BAL.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) NETWORK ANALYZER 5V 10µF S-PARAMETER TEST SET 0.1µF PORT 1 CURRENT PROBE 1mV/mA 10µF 0.1µF 5V PORT 2 16 VCC1 10µF CAL VCC2 33 0.1µF OUT 0.1µF IN 50 100 BAL. 33 TRANSFORMER NH0300HB TEST UNBAL. OUT 0.1µF GND2 GND1 Test Circuit 5 NETWORK ANALYZER S-PARAMETER TEST SET GND PORT 1 PORT 2 CURRENT PROBE 1mV/mA 10µF 0.1µF 16 GND1 CAL GND2 33 0.1µF OUT 50 100 BAL. IN 33 TRANSFORMER NH0300HB TEST UNBAL.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) PULSE GEN. VCC1 VCC2 33 0.1µF 1k 0.1µF OUT IN DUT A OUT ZO = 50Ω OSCILLOSCOPE 33 B 0.1µF ZO = 50Ω 50 GND1 GND2 Measurement done using differential wave forms Test Circuit 7 SD00322 Fig 5. Test circuit 7. © Philips Electronics N.V. 2001. All rights reserved. 9397 750 07427 Product specification Rev.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Typical Differential Output Voltage vs Current Input 5V + OUT + IN VOUT (V) DUT – OUT – IIN (µA) GND1 GND2 2.00 DIFFERENTIAL OUTPUT VOLTAGE (V) 1.60 1.20 0.80 0.40 0.00 –0.40 –0.80 –1.20 –1.60 –2.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 10. Typical performance characteristics NE5211 Supply Current vs Temperature NE5211 Output Bias Voltage vs Temperature 26 5.0V 24 4.5V 22 DIFFERENTIAL OUTPUT VOLTAGE (V) OUTPUT BIAS VOLTAGE (V) 5.5V 28 (ICC1+ I CC2) TOTAL SUPPLY CURRENT (mA) 2.0 3.50 30 VCC = 5.0V 3.45 3.40 3.35 PIN 14 PIN 12 3.30 20 3.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) NE5211 Differential Transresistance 5.5V 5.0V PIN 12 TA = 25°C RL = 50W 4.5V 1 10 FREQUENCY (MHz) 100 NE5211 Gain vs Frequency 33 DIFFERENTIAL TRANSRESISTANCE (kW ) 17 16 15 14 13 12 11 10 9 8 0.1 GAIN (dB) GAIN (dB) 17 16 15 14 13 12 11 10 9 8 0.1 NE5211 Gain vs Frequency 5.5V 32 5.0V PIN 14 TA = 25°C RL = 50W 31 4.5V 1 10 FREQUENCY (MHz) vs Temperature DC TESTED RL = ¥ 30 29 5.5V 28 5.0V 4.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) NE5211 Output Resistance vs Temperature NE5211 Output Resistance vs Temperature 18 18 19 PIN 12 16 PIN 14 15 PIN 12 14 13 4.5V 15 5.0V 14 5.5V 20 40 60 80 100 120 140 ° 4.5V 5.0V 15 5.5V 10 5 0 0.1 1 10 20 40 60 60 40 20 100 0 20 40 60 80 100 120 140 ° AMBIENT TEMPERATURE ( C) NE5211 Output Resistance vs Frequency ) 80 60 VCC = 5.0V ° ° +25°C 55°C +125 C 50 +85 C 40 30 20 10 0 0.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Output Step Response VCC = 5V TA = 25°C 20mV/Div 0 2 4 6 8 10 (ns) 12 14 16 18 20 Fig 10. Typical performance characteristics. (cont.) 11. Theory of operation Transimpedance amplifiers have been widely used as the preamplifier in fiber-optic receivers.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Q11 – Q12 which are biased by constant current sources. The collectors of Q11 – Q12 are bonded to an external pin, VCC2, in order to reduce the feedback to the input stage. The output impedance is about 17Ω single-ended. For ease of performance evaluation, a 33Ω resistor is used in series with each output to match to a 50Ω test system. 12.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) strongly determined by the quiescent current of Q1, the feedback resistor RF, and the bandwidth; however, it is not dependent upon the internal Miller-capacitance. The measured wideband noise was 41 nA RMS in a 200 MHz bandwidth. 14.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) P ----hc ∴I = η × ----- × e Amps (Coulombs/sec.) λ where e = electron charge = 1.6 × 10-19 Coulombs η×e ------------hc Responsivity R = ------------- Amp/watt λ I = P×R Assuming a data rate of 400 Mbaud (Bandwidth, B = 200 MHz), the noise parameter Zn may be calculated as:1 –9 I EQ 41 × 10 Z = ------= 1281 - = -----------------------------------------------------------– 19 6 qB ( 1.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) OUTPUT + A3 INPUT A1 A2 RF A4 OUTPUT – SD00327 Fig 11. SA5211 – Block diagram. This represents the maximum limit attainable with the SA5211 operating at 200 MHz bandwidth, with a half mark/half space digital transmission at 850nm wavelength. VCC1 VCC2 R3 R1 Q2 INPUT R13 Q4 Q11 + Q3 Q1 R12 Q12 Q15 R2 Q16 R14 GND1 OUT– R15 R7 PHOTODIODE + OUT+ VB2 R5 R4 GND2 SD00328 Fig 12. Transimpedance amplifier.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 15. Application information Package parasitics, particularly ground lead inductances and parasitic capacitances, can significantly degrade the frequency response. Since the SA5211 has differential outputs which can feed back signals to the input by parasitic package or board layout capacitances, both peaking and attenuating type frequency response shaping is possible.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) +VCC GND 47µF C1 C2 .01µF D1 LED 1 LED IN1B 20 3 THRESH 4 GNDA 5 FLAG 100pF IN1A 19 L2 10µH 6 C11 C10 µ 10 F L3 10µH .01µF C12 C13 .01µF JAM 7 VCCD 8 VCCA 9 GNDD 10 TTLOUT CAZP 18 CAZN NE5214 2 CPKDET 17 GND VCC 7 9 GND VCC 6 10 GND NC 5 IIN 4 8 100pF C9 R3 47k L1 10µH C7 C8 11 0.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 1 14 OUT () GND 2 13 2 GND 2 GND 2 12 3 OUT (+) NC INPUT 11 4 NC 10 GND 1 GND 1 5 GND 1 VCC1 9 6 7 ECN No.: 06027 8 GND 1 VCC 2 SD00488 1992 Mar 13 Fig 15. SA5211 Bonding diagram. 15.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) processes are utilized for wafer sawing and die pick and place into waffle pack carriers, it is impossible to guarantee 100% functionality through this process. There is no post waffle pack testing performed on individual die.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 16. Package outline SO14: plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 D E A X c y HE v M A Z 8 14 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 7 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 17. Soldering 17.1 Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our Data Handbook IC26; Integrated Circuit Packages (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. 17.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 18. Revision history Table 7: Revision history Rev Date 03 19981007 CPCN Description 853-1799 20142 Product specification; third version; supersedes second version SA5211_2 of 1998 Oct 07 (9397 750 04624). Modifications: The format of this specification has been redesigned to comply with Philips Semiconductors’ new presentation and information standard.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) 19. Data sheet status Data sheet status [1] Product status [2] Definition Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. +375 17 220 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Tel. +359 268 9211, Fax. +359 268 9102 Canada: Tel. +1 800 234 7381 China/Hong Kong: Tel. +852 2 319 7888, Fax.
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SA5211 Philips Semiconductors Transimpedance amplifier (180 MHz) Contents 1 2 3 4 4.1 5 6 7 8 9 10 11 12 13 14 15 15.1 16 17 17.1 17.2 17.3 17.4 17.5 18 19 20 21 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . .