INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES GENERAL DESCRIPTION • Operating at 3.6 V battery supply The CGY2014TT is a dual-band GSM/DCS/PCS GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The circuit is specifically designed to operate at 3.6 V battery supply voltage. • Power Amplifier (PA) output power: 35 dBm in GSM band and 32.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT BLOCK DIAGRAM GND1LB handbook, full pagewidth 8 RFILB GND RFIHB VDD1LB VDD2LB 6 7 9 15 13, 14 1, 10, 11, 12, 16, 19, 20 CGY2014TT 2 17, 18 3 VDD1HB 4, 5 VDD2HB Fig.1 Block diagram. 2000 Oct 16 3 RFO/VDD3LB n.c.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT PINNING SYMBOL PIN DESCRIPTION n.c. 1 not connected RFIHB 2 DCS/PCS power amplifier input VDD1HB 3 DCS/PCS first stage supply voltage VDD2HB 4 DCS/PCS second stage supply voltage VDD2HB 5 DCS/PCS second stage supply voltage VDD2LB 6 GSM second stage supply voltage VDD1LB 7 GSM first stage supply voltage GND1LB 8 GSM first stage ground RFILB 9 GSM power amplifier input n.c.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MAX. UNIT VDD positive supply voltage 5.2 V Tj(max) maximum operating junction temperature 150 °C Tstg storage temperature 150 °C Ptot total power dissipation 2.0 W Pi(LB) GSM input power 10 dBm Pi(HB) DCS/PCS input power 10 dBm note 1 Note 1.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT AC CHARACTERISTICS VDD = 3.5 V; Tamb = 25 °C; measured on the Philips demoboard (see Fig.8). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Low band: GSM power amplifier Pi(LB) input power −2 0 +2 dBm fRF(LB) RF frequency range 880 − 915 MHz Po(LB)(max) maximum output power see Figs 3 and 4 34.5 35 − dBm ηLB efficiency see Fig.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT Performance characteristics in GSM band FCA171 37 (3) handbook, halfpage efficiency Po (dBm) Po (dBm) η (2) (1) FCA176 40 handbook, halfpage 60 (%) (3) (1) (2) (3) 30 (2) 35 40 (1) output power 20 20 33 10 31 800 VDD1(LB) = 3 V. VDD2(LB) = VDD3(LB) = 3.5 V. (1) Tamb = 85 °C. (2) Tamb = 25 °C. Pi(LB) = 0 dBm. (3) Tamb = −20 °C. Fig.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT APPLICATION INFORMATION Vd23DCS handbook, full pagewidth 10 nF TRL2 RFinDCS n.c. 3.9 nH RFIHB TRL1 VDD1HB Vd1DCS 1 pF 1 nF 4.7 pF VDD2HB 100 pF V DD2HB VDD2LB 100 pF Vd1GSM 1 nF RFinGSM 3.3 nH 6 pF VDD1LB GND1LB RFILB n.c. 1 20 2 19 3 18 17 4 16 5 CGY2014TT 6 15 7 14 8 13 9 12 10 11 n.c. n.c. TRL3 RFO/VDD3HB 2.7 pF RFoutDCS RFO/VDD3HB 3 pF GND BA891 Vpin RFO/VDD3LB n.c.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT handbook, full pagewidth 1 nF 1 nF 3.3 nH 3.9 nH 4.7 pF 6 pF 100 pF 1 pF 100 pF CGY2014TT 4 pF 56 pF 10 nF 3 pF 4.7 pF 2.7 pF BA891 9.1 pF 5.6 pF 3.3 kΩ 100 pF FCA175 Dimensions: approximately 19 mm × 19 mm. Fig.8 Part of layout of Philips demoboard.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT PACKAGE OUTLINE HTSSOP20: plastic, heatsink thin shrink small outline package; 20 leads; body width 4.4 mm E D A SOT527-1 X c y HE heathsink side v M A Dh Z 11 20 (A 3) A2 Eh pin 1 index A A1 θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) Dh E(2) Eh e HE L Lp v w y Z(1) θ mm 1.10 0.15 0.05 0.95 0.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT SOLDERING If wave soldering is used the following conditions must be observed for optimal results: Introduction to soldering surface mount packages • Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. This text gives a very brief insight to a complex technology.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT Suitability of surface mount IC packages for wave and reflow soldering methods SOLDERING METHOD PACKAGE WAVE BGA, LFBGA, SQFP, TFBGA not suitable suitable(2) HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not PLCC(3), SO, SOJ suitable LQFP, QFP, TQFP SSOP, TSSOP, VSO REFLOW(1) suitable suitable suitable not recommended(3)(4) suitable not recommended(5) suitable Notes 1.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT NOTES 2000 Oct 16 14
Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT NOTES 2000 Oct 16 15
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