DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGM1012 MMIC wideband amplifier Product specification Supersedes data of 2002 May 16 2002 Sep 06
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 PINNING FEATURES • Internally matched to 50 Ω PIN • Very wide frequency range (4 Ghz at 3 dB bandwidth) DESCRIPTION 1 • Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness) VS 2, 5 GND2 • 10 dBm saturated output power at 1 GHz 3 RF out • High linearity (18 dBm IP3(out) at 1 GHz) 4 GND1 6 RF in • Low current (14.6 mA) • Unconditionally stable.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER VS DC supply voltage IS supply current CONDITIONS RF input AC coupled Ts ≤ 90 °C MIN. MAX.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 CHARACTERISTICS VS = 3 V; IS = 14.6 mA; Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER IS supply current s212 insertion power gain RL IN RL OUT s122 NF return losses input return losses output isolation noise figure CONDITIONS MIN. TYP. MAX. UNIT 11 14.6 19 mA f = 100 MHz 19 19.5 20 dB f = 1 GHz 19 20.1 21 dB f = 1.8 GHz 19 20.4 21 dB f = 2.2 GHz 19 20.4 22 dB f = 2.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 APPLICATION INFORMATION In Fig.6 the MMIC is used as a driver to the power amplifier as part of a transmitter circuit. Good linear performance and matched input and output offer quick design solutions in such applications. Figure 2 shows a typical application circuit for the BGM1012 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.2 0 0.2 100 MHz 2 4 GHz 180° 0.4 +5 0.5 5 0° 0 −5 −0.2 −0.5 −2 −135° −45° −1 MLD910 1.0 −90° IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 100 MHz 180° 0.2 0 0.5 1 0.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 MLD912 0 MLD913 25 handbook, halfpage s 2 handbook, halfpage 12 (dB) −10 s21 2 (dB) 20 (1) −20 (2) (3) −30 15 −40 −50 10 0 1000 2000 3000 4000 0 1000 2000 3000 f (MHz) Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 MLD916 5.5 MLD917 12 handbook, halfpage handbook, halfpage NF (dB) K 5.3 8 5.1 4.9 (1) (3) 4 (2) 4.7 0 4.5 0 1000 2000 f (MHz) 3000 0 ZO = 50 Ω. (1) IS = 10.6 mA; VS = 2.7 V. (2) IS = 14.6 mA; VS = 3 V. (3) IS = 18.7 mA; VS = 3.3 V. 2000 3000 4000 f (MHz) IS = 14.6 mA; VS = 3 V; PD = −30 dBm; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. 2002 Sep 06 1000 Fig.
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Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
Philips Semiconductors Product specification MMIC wideband amplifier BGM1012 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
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