DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02
Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES BGD885 PINNING - SOT115D • Excellent linearity PIN • Extremely low noise 1 • Silicon nitride passivation 2, 3, 5, 6, 7 • Rugged construction 4 • Gold metallization ensures excellent reliability.
Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL PARAMETER CONDITIONS MIN. 16.5 MAX. 17.5 UNIT Gp power gain f = 50 MHz dB SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB FL flatness of frequency response f = 40 to 860 MHz − ±0.
Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 BGD885 1 2 3 4 5 6 7 8 9 input output 10 V C1 C2 VB = 24 V MEA094-2 Fig.2 Test circuit. List of components (see Fig.2) COMPONENT C1 DESCRIPTION ceramic multilayer capacitor VALUE 1 nF (max.
Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads SOT115D D E Z A2 1 2 3 4 5 6 7 8 9 A L F S W c e d U2 b q2 e1 Q w M y M B q1 B y M B y M B P U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.
Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier BGD885 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier NOTES 2001 Nov 02 7 BGD885
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