Datasheet

Ver. BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2011
1
LNJ237W82RA
Hight Bright Surface Mounting Chip LED
ESS II Type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Power dissipation P
D
55 mW
Forward current I
F
20 mA
Pulse forward current
*
I
FP
60 mA
Reverse voltage V
R
4 V
Operating ambient temperature T
opr
–30 to +85
°C
Storage temperature T
stg
–40 to +100
°C
Note)
*
: The condition of I
FP
is duty 10%, Pulse width 1 msec.
Electro-Optical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity
*
1
I
O
I
F
= 5 mA 5.8 16.0 26.8 mcd
Reverse current I
R
V
R
= 4 V
 
100 µA
Forward voltage V
F
I
F
= 5 mA

1.95 2.30 V
Peak emission wavelength
λ
P
I
F
= 5 mA

645

nm
Dominant emission wavelength
*
2
λ
d
I
F
= 5 mA 620 630 640 nm
Spectral half band width
Δλ
I
F
= 5 mA

20

nm
Note)
*
1: Measurement tolerance: ±20%
*
2: Measurement tolerance: ±2 nm
0
10
20
30
40
01.5 1.7 2.11.9 2.52.3
−30
30 60 90
−30
0 30 60 90
10
1
10
1
10
2
10
3
10
4
10
2
10
2
10
3
I
O
 I
F
I
F
 V
F
0
20
40
60
80
100
600550 650 700
1 10 10
2
020 2040 4060 6080 80100 100
0°
10°−10°
20°−20°
30°−30°
40°−40°
50°−50°
60°−60°
70°−70°
80°−80°
80°
60°
40°
20°
90°−90°
Y
X
Y
X
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Forward current I
F
(mA)
Forward voltage V
F
(V)Forward current I
F
(mA)
Luminous intensity I
O
(mcd)
Relative luminous intensity (%)
Relative luminous intensity  T
a
Relative luminous intensity  λ
P
Peak emission wavelength λ
P
(nm)
Relative luminous intensity (%)
Forward current I
F
(mA)
I
F
 T
a
Lighting Color
Red