Datasheet

ZJC00436BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: November 2009
1
DSA5001
Silicon PNP epitaxial planar type
For general amplification
Complementary to DSC5001
 Features
 High forward current transfer ratio h
FE
with excellent linearity
 Eco-friendly Halogen-free package
 Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
 Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
–60 V
Collector-emitter voltage (Base open) V
CEO
–50 V
Emitter-base voltage (Collector open) V
EBO
–7 V
Collector current I
C
–100 mA
Peak collector current I
CP
–200 mA
Collector power dissipation P
C
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
 Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= –10 mA, I
E
= 0 –60 V
Collector-emitter voltage (Base open) V
CEO
I
C
= –2 mA, I
B
= 0 –50 V
Emitter-base voltage (Collector open) V
EBO
I
E
= –10 mA, I
C
= 0 –7 V
Collector-base cutoff current (Emitter open) I
CBO
V
CB
= –20 V, I
E
= 0 – 0.1
mA
Collector-emitter cutoff current (Base open) I
CEO
V
CE
= –10 V, I
B
= 0 –100
mA
Forward current transfer ratio
*
h
FE
V
CE
= –10 V, I
C
= –2 mA 210 460

Collector-emitter saturation voltage V
CE(sat)
I
C
= –100 mA, I
B
= –10 mA – 0.2 – 0.5 V
Transition frequency f
T
V
CE
= –10 V, I
C
= –2 mA 150 MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= –10 V, I
E
= 0, f = 1 MHz 2 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Code R S 0
Rank R S No-rank
h
FE
210 to 340 290 to 460 210 to 460
Marking Symbol A1R A1S A1
Product of no-rank is not classified and have no marking symbol for rank.
 Package
Code
SMini3-F2-B
Pin Name
1. Base
2. Emitter
3. Collector
 Marking Symbol: A1