Datasheet

Product Standards
Transistors with Built-in Resistor
DRC9124X0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
0.57
k

0.6 V
-0.47
V
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
22 +30%
2.1
Input resistance R1
-30%
Resistance ratio R1/R2
0.37
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
400 -
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 80
ICEO
VCE = 50 V, IB = 0 0.5 μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0 0.2 mA
Collector-emitter cutoff current (Base open)
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1 μA
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50 V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT 125 mW
VCEO 50 V
Collector current IC 100 mA
3
Unit: mm
Min Typ
Internal Connection
Resistance
value
1of
R1 22
k

R2 47
k




Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE
DRC9124X0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9124X
DRC5124X in SSMini3 type package
 Features
 Packaging
SSMini3-F3-B
JEITA SC-89
3. Collector
 Marking Symbol:
NF
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
SOT-490
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
C
B
R
1
R
2
E
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
Doc No.
TT4-EA-11522
Revision.
2
Established
:
2009-10-09
Revised
:
2014-02-27