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Product Standards
Transistors with Built-in Resistor
DRC9115G0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
100 +30%
k
Between emitter base resistance
R2
-30%
V
0.4 V
0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
0.9
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 0.5 mA
0.1 mA
Forward current transfer ratio
hFE
VCE = 10 V, IC = 5 mA 80 -
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
50 V
Parameter
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
°C
Max Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 μA, IE = 0 50 V
Tstg -55 to +150
Junction temperature Tj 150 °C
Total power dissipation PT 125 mW
Collector current IC 100 mA
Collector-emitter voltage (Base open) VCEO 50 V
Collector-base voltage (Emitter open) VCBO 50 V
Internal Connection
Resistance
value
R2
100
k
1of3
Unit: mm
Min Typ
SC-89
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRC9115G0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA9115G
DRC5115G in SSMini3 type package
Features
Marking Symbol:
NX
Code
Base
Emitter
SOT-490
Panasonic
Packaging
SSMini3-F3-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
C
B
R
2
E
Doc No.
TT4-EA-12491
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)