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Product Standards
Transistors with Built-in Resistor
DRC9114W0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note) 1.
Page
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
Emitter
+85 °C
Unit
Panasonic
50 V
N9
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
SOT-490
pcs / reel (standard)
SSMini3-F3-B
JEITA SC-89
3. Collector
DRC9114W0L
Silicon NPN epitaxial planar type
For digital circuits
DRC5114W in SSMini3 type package
Features
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
Packaging
Marking Symbol:
1of
R1
10
k
R2
4.7
k
3
Unit
Unit: mm
Min Typ
Internal Connection
Resistance
value
Max
VCEO 50 V
Collector current IC 100 mA
Total power dissipation PT 125 mW
Junction temperature Tj 150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
IC = 10 μA, IE = 0 50
+150 °C
V
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base voltage (Emitter open) VCBO
0.5 μA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1
VEB = 6 V, IC = 0 1
μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 20 -
Emitter-base cutoff current (Collector open)
IEBO
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
3.0 V
1.3 V
-
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
10 +30%
k
Resistance ratio R1/R2
1.70 2.13 2.60
Input resistance R1
-30%
C
B
R
1
R
2
E
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
Doc No.
TT4-EA-11649
Revision.
2
Established
:
2009-10-22
:
2014-03-13

Summary of content (4 pages)