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Product Standards
Transistors with Built-in Resistor
DRC5144G0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating Unit
000 pcs / reel (standard)3
1.
2.
3.
Code
Base
Emitter
―
Panasonic
Low collector-emitter saturation voltage Vce(sat)
DRC5144G0L
Silicon NPN epitaxial planar type
For digital circuits
DRC2144G in SMini3 type package
Features
NU
SC-85
Collector
Packaging
SMini3-F2-B
JEITA
Embossed type (Thermo-compression sealing) :
Unit: mm
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
Internal Connection
Resistance
value
R2 47
k
1of3
Max Unit
V
V
0.4
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
mW
Junction temperature Tj 150 °C
Total power dissipation PT 150
Storage temperature Tstg -55 to +150 °C
Parameter
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Typ
ICCollector current 100 mA
Conditions Min
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50
Symbol
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50
0.1 μA
μA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0
mA
Collector-emitter cutoff current (Base open)
ICEO
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
0.5 VCE = 50 V, IB = 0
VCE = 10 V, IC = 5 mA 80
2.0
-
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Forward current transfer ratio hFE
Between emitter base resistance
Vi(on)
V
R2
-30% 47 +30%
k
Vi(off)
Input voltage
VCE = 5 V, IC = 100 μA
V VCE = 0.2 V, IC = 5 mA 0.9
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
C
B
R
2
E
Doc No.
TT4-EA-11610
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)