Datasheet

Product Standards
Transistors with Built-in Resistor
DRC5114Y0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
―
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
 Marking Symbol:
NC
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
DRC5114Y0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA5114Y
DRC2114Y in SMini3 type package
 Features
 Packaging
SMini3-F2-B
3. Collector
k



Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
JEITA SC-85
Resistance
value
1of
R1 10
k

R2 47
mA
3
Unit: mm
Min Typ
Internal Connection
Total power dissipation PT 150 mW
VCEO 50 V
Collector current IC 100
-55 to
Junction temperature Tj 150 °C
V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1 μA
μA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0 0.2 mA
Collector-emitter cutoff current (Base open)
ICEO
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 80
0.5 VCE = 50 V, IB = 0
-
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
1.7 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
-
Input resistance R1
-30%
0.5 V
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
10 +30%
k

Resistance ratio R1/R2
0.17 0.21 0.25
C
B
R
1
R
2
E
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
Doc No.
TT4-EA-11596
Revision.
3
Established
:
2009-10-15
Revised
:
2014-03-20