Datasheet

Product Standards
Transistors with Built-in Resistor
DRC5114W0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Parameter Symbol Rating
 Marking Symbol:
N9
 Packaging
000
to
Collector-emitter voltage (Base open)
pcs / reel (standard)
VCEO 50 V
3
Collector-base voltage (Emitter open) VCBO
+85 °C
Unit
Panasonic
50
Operating ambient temperature Topr -40
Code
JEITA
3. Collector
SC-85
―
SMini3-F2-B


Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRC5114W0L
Silicon NPN epitaxial planar type
For digital circuits
DRC2114W in SMini3 type package
 Features
1. Base
Embossed type (Thermo-compression sealing) :
Emitter
1of
R1 10
k

R2 4.7
V
3
Unit: mm
Typ
Internal Connection
2.
Max Unit
Collector current IC 100 mA
Total power dissipation PT 150
k

mW
Junction temperature Tj 150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
VCBO
IC = 10 μA, IE = 0 50
+150 °C
Min
Resistance
value
V
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base voltage (Emitter open)
0.5 μA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1
VEB = 6 V, IC = 0 1
μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 20 -
Emitter-base cutoff current (Collector open)
IEBO
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
3.0 V
1.3 V
-
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
10 +30%
k

Resistance ratio R1/R2
1.70 2.13 2.60
Input resistance R1
-30%
C
B
R
1
R
2
E
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
Doc No.
TT4-EA-11595
Revision.
2
Established
:
2009-10-15
Revised
:
2014-03-25