Datasheet

Product Standards
Transistors with Built-in Resistor
DRC3144G0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Parameter Symbol Rating Unit
 Marking Symbol:
NU
Code
Base
Emitter
SOT-723
Panasonic
 Packaging
SSSMini3-F2-B
JEITA
DRC3144G0L
Silicon NPN epitaxial planar type
For digital circuits
DRC9144G in SSSMini3 type package
 Features


Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
SC-105AA
Collector
1of3
Unit: mm
Min Typ
Internal Connection
Resistance
value
47
k
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
50
V
Collector current IC
100
mA
Total power dissipation PT
100
mW
Junction temperature Tj 150 °C
Tstg -55 to +150 °C
Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50 V
Parameter
V
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1 μA
Collector-emitter voltage (Base open)
VCE = 50 V, IB = 0
VCEO IC = 2 mA, IB = 0 50
μA
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 2.0 mA
Collector-emitter cutoff current (Base open)
ICEO
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 80
VCE(sat) IC = 10 mA, IB = 0.5 mA
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA0.4
0.9
Collector-emitter saturation voltage
R2
Between emitter base resistance
-30% 47 +30%
k

R2
V
V
-
0.25 V
0.5
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
2
E
Doc No.
TT4-EA-11760
Revision.
2
Established
:
2009-10-30
Revised
:
2014-03-20