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Product Standards
Transistors with Built-in Resistor
DRC3143T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating Unit
Code SOT-723
Packaging
SSSMini3-F2-B
JEITA
1.
2.
3.
Embossed type (Thermo-compression sealing) :
DRC3143T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3143T
DRC9143T in SSSMini3 type package
Features
SC-105AA
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
Marking Symbol:
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
NA
10 000
Unit: mm
Internal Connection
Panasonic
1of3
Min Typ Max Unit
V
Collector-base voltage (Emitter open) VCBO 50 V
Collector-emitter voltage (Base open) VCEO 50 V
Collector current IC 100 mA
Total power dissipation PT 100 mW
Symbol Conditions
Storage temperature Tstg -55 to
Parameter
Resistance
value
Collector-base voltage (Emitter open) VCBO IC = 10 μA, IE = 0 50 V
μA
Collector-base cutoff current (Emitter open)
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5
ICBO VCB = 50 V, IE = 0 0.1 μA
460 -
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0
VCE = 5 V, IC = 100 μA
1.0
Collector-emitter saturation voltage
0.01 mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 160
0.4 V
0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off)
+30%
k
Input resistance R1 -30%
V
°C
Tj 150 °C
4.7
VCE(sat) IC = 10 mA, IB = 0.5 mA
Junction temperature
pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Base
Emitter
Collector
R1
4.7
k
+150
C
B
R
1
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
Doc No.
TT4-EA-11699
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)