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Product Standards
Transistors with Built-in Resistor
DRC3143E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
VCEO
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
50 V
Marking Symbol:
N5
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 10 000
SOT-723
Packaging
SSSMini3-F2-B
JEITA SC-105AA
3. Collector
DRC3143E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3143E
DRC9143E in SSSMini3 type package
Features
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
1of
R1
4.7
k
R2
4.7
k
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Internal Connection
Resistance
value
100 mA
Collector-emitter voltage (Base open)
3
Unit: mm
Min Typ Max Unit
°C
+150 °C
Total power dissipation PT
Collector current IC
100 mW
Storage temperature Tstg -55 to
Junction temperature Tj 150
IC = 10 μA, IE = 0 50
Parameter Symbol Conditions
V
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base voltage (Emitter open) VCBO
0.5 μA
Collector-base cutoff current (Emitter open)
ICBO
VCB = 50 V, IE = 0 0.1
VEB = 6 V, IC = 0 2.0
μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 20 -
Emitter-base cutoff current (Collector open)
IEBO
Collector-emitter saturation voltage VCE(sat)
IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
1.9 V
0.8 V
Input resistance R1
-30% 4.7 +30%
k
Resistance ratio R1/R2
0.8 1.0 1.2 -
C
B
R
1
R
2
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
Doc No.
TT4-EA-11698
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)