Datasheet
Product Standards
Transistors with Built-in Resistor
DRC3123E0L
Technical Data ( reference )
Page
2of3
300 μA
350 μA
400 μA
450 μA
500 μA
550 μA
600 μA
650 μA
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
024681012
Collector current IC (A)
Collector-emitter voltage VCE (V)
IC - VCE
IB = 700 μA
Ta = 25 ℃
0
25
50
75
100
125
150
0.0001 0.001 0.01 0.1
Forward current transfer ratio hFE
Collector current IC (A)
hFE - IC
Ta = 85 ℃
25 ℃
-40 ℃
VCE = 10 V
0.01
0.1
1
10
0.0001 0.001 0.01 0.1
Collector-emitter saturation voltage
VCE(sat) (V)
Collector current IC (A)
VCE(sat) - IC
IC/IB = 20
Ta = 85 ℃
25 ℃
-40 ℃
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
00.511.52
Output current Io (A)
Input voltage VIN (V)
Io - VIN
25 ℃
Vo = 5 V
Ta = 85 ℃
-40 ℃
0.1
1
10
100
0.0001 0.001 0.01 0.1
Input voltage VIN (V)
Output current Io (A)
VIN - Io
Vo = 0.2 V
85 ℃
25 ℃
Ta = -40 ℃
0
25
50
75
100
125
0 20 40 60 80 100 120 140 160 180 200
Total power dissipation PT (mW)
Ambient temperature Ta (℃)
PT - Ta
Doc No.
TT4-EA-11694
Revision.
2
Established
:
2009-10-27
Revised
:
2014-03-25




