Datasheet

Product Standards
Transistors with Built-in Resistor
DRC3115T0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Parameter Symbol Rating Unit
1.
2.
3.
Code
Base
Emitter
SOT-723
Panasonic
 Packaging
SSSMini3-F2-B
JEITA
Embossed type (Thermo-compression sealing) : 10
SC-105AA
DRC3115T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3115T
DRC9115T in SSSMini3 type package
 Features
 Marking Symbol:
NT
Collector



Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
000 pcs / reel (standard)
Unit: mm
Min Typ
1of3
Conditions
°C
°C
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature
Collector-base voltage (Emitter open) VCBO
50
V
Internal Connection
Resistance
value
100
k
Topr -40
mW
Collector current IC
100
mA
Collector-emitter voltage (Base open) VCEO
50
V
Junction temperature Tj 150
Storage temperature
Total power dissipation PT
100
to
IC = 10 μA, IE = 0 50 V
Tstg -55 to +150
Symbol
V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
Max Unit
Collector-base voltage (Emitter open)
VCBO
ICBO VCB = 50 V, IE = 0
50
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
-
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.01 mA
160 460
0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
-30%
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Resistance ratio
R1
4.3
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
100 +30%
k

R1
0.4 V
V
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
1
E
Doc No.
TT4-EA-11693
Revision.
3
Established
:
2009-10-27
Revised
:
2014-03-27