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Product Standards
Transistors with Built-in Resistor
DRC3115G0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
Parameter Symbol Rating Unit
1.
2.
3.
Code
Base
Emitter
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
Embossed type (Thermo-compression sealing) : 10
SC-105AA
DRC3115G0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3115G
DRC9115G in SSSMini3 type package
Features
Marking Symbol:
NX
Collector
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
000 pcs / reel (standard)
Unit: mm
Min Typ
1of3
Conditions
°C
°C
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature
Collector-base voltage (Emitter open) VCBO
50
V
Internal Connection
Resistance
value
100
k
Topr -40
mW
Collector current IC
100
mA
Collector-emitter voltage (Base open) VCEO
50
V
Junction temperature Tj 150
Storage temperature
Total power dissipation PT
100
to
IC = 10 μA, IE = 0 50 V
Tstg -55 to +150
Symbol
V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
Max Unit
Collector-base voltage (Emitter open)
VCBO
ICBO VCB = 50 V, IE = 0
50
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
-
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.1 mA
80
0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
-30%
Resistance ratio R2
0.9
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
100 +30%
k
R2
0.4 V
V
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
2
E
Doc No.
TT4-EA-11692
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)