Datasheet

Product Standards
Transistors with Built-in Resistor
DRC3115E0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating Unit
 Marking Symbol:
NN
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Panasonic
 Packaging
SSSMini3-F2-B
JEITA
1.
2.
3.
DRC3115E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3115E
DRC9115E in SSSMini3 type package
 Features


Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
SC-105AA
Collector
Unit: mm
Internal Connection
Code
Base
Emitter
SOT-723
1of3
Min Typ Max Unit
V
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
50
V
Collector current IC
100
mA
Total power dissipation PT
100
mW
Junction temperature Tj 150 °C
°C
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0
Tstg -55 to +150
50 V
Parameter
Resistance
value
Symbol Conditions
Storage temperature
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0 50
0.5 μA
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1
VEB = 6 V, IC = 0 0.1
μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0
mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 80 -
Emitter-base cutoff current (Collector open)
IEBO
V
5.7
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
V
1.0 1.2 -
Resistance ratio
R1/R2 0.8
V
Input resistance
R1 -30% 100 30%
k

R1
100
k

R2
100
k

0.8
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
C
B
R
1
R
2
E
Doc No.
TT4-EA-11691
Revision.
2
Established
:
2009-10-27
Revised
:
2014-03-20