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Product Standards
Transistors with Built-in Resistor
DRC2143T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Page
000 pcs / reel (standard)
+85 °COperating ambient temperature Topr -40 to
Parameter Symbol Rating Unit
1.
2.
3.
Code
Base
Emitter
TO-236AA/SOT-23
Panasonic
Packaging
Mini3-G3-B
JEITA
Embossed type (Thermo-compression sealing) : 3
DRC2143T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2143T
Features
Marking Symbol:
NA
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
SC-59A
Collector
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO 50 V
Collector-base voltage (Emitter open) VCBO 50 V
Total power dissipation PT 200 mW
Collector current IC 100 mA
Symbol Conditions
Storage temperature Tstg -55 to
Parameter
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50
Collector-base voltage (Emitter open) VCBO IC = 10 μA, IE = 0 50
VCB = 50 V, IE = 0
V
V
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO
mA
Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 160 460 -
Emitter-base cutoff current (Collector open)
IEBO 0.01 VEB = 6 V, IC = 0
0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA
1.0
-30%
V
0.4 V
Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA
4.7
4.7 +30%
k
Input resistance R1
k
+150 °C
Junction temperature Tj 150 °C
R1
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
E
Doc No.
TT4-EA-11752
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)