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Product Standards
Transistors with Built-in Resistor
DRC2124E0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
22 +30%
k
1.2 -1.0
Resistance ratio
Input resistance
R1/R2
V
VCE(sat) IC = 10 mA, IB = 0.5 mA
V
VCE = 0.2 V, IC = 5 mA 2.6
0.25 V
hFE VCE = 10 V, IC = 5 mA 60 -
μA
ICBO VCB = 50 V, IE = 0
IEBO VEB = 6 V, IC = 0 0.2 mA
V
IC = 10 μA, IE = 0
0.1 μA
VCEO IC = 2 mA, IB = 0 50
0.8
Forward current transfer ratio
ICEO VCE = 50 V, IB = 0 0.5
0.8
Input voltage
Vi(off) VCE = 5 V, IC = 100 μA
R1 -30%
Collector-emitter saturation voltage
Vi(on)
Emitter-base cutoff current (Collector open)
Collector-emitter cutoff current (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter voltage (Base open)
Max Unit
Collector-base voltage (Emitter open)
VCBO 50 V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT 200 mW
VCEO 50 V
Collector current IC 100 mA
3
Unit: mm
Min Typ
Internal Connection
Resistance
value
1of
R1 22
k
R2 22
k
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRC2124E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2124E
Features
Packaging
Mini3-G3-B
JEITA SC-59A
3. Collector
Marking Symbol:
NE
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3 000
TO-236AA/SOT-23
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
Doc No.
TT4-EA-11746
Revision.
2
Established
:
Revised
:

Summary of content (4 pages)