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Product Standards

Transistors with Built-in Resistor

DRC2123J0L

 Absolute Maximum Ratings Ta = 25 C

 Electrical Characteristics Ta = 25 C  3 C

Note

)

1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.

Page

+30%



Resistance ratio R1/R2 0.037

0.047

0.057 -

0.4 V

Input resistance R1 -30% 2.2

Input voltage

Vi(on) VCE = 0.2 V, IC = 5 mA

Vi(off) VCE = 5 V, IC = 100 μA

1.2

Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25

Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 80 -

Emitter-base cutoff current (Collector open)

IEBO VEB = 6 V, IC = 0 0.2

μA

Collector-emitter cutoff current (Base open)

ICEO VCE = 50 V, IB = 0 0.5 μA

Collector-base cutoff current (Emitter open)

ICBO VCB = 50 V, IE = 0 0.1

Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V

Collector-base voltage (Emitter open) VCBO IC = 10 μA, IE = 0 50

+150 °C

Parameter Symbol Conditions

Storage temperature Tstg -55 to

Total power dissipation PT 200 mW

Junction temperature Tj 150 °C

VCEO 50 V

Collector current IC 100 mA

Unit: mm

Min Typ

Internal Connection

Resistance

value

Max

1of

2.2



Unit

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

Low collector-emitter saturation voltage Vce(sat)

 Packaging

 Marking Symbol:

3. Collector

DRC2123J0L

Silicon NPN epitaxial planar type

For digital circuits

Complementary to DRA2123J

 Features



Code

1. Base

Embossed type (Thermo-compression sealing) : 3 000

TO-236AA/SOT-23

pcs / reel (standard)

Emitter

+85 °C

Unit

Panasonic

50 V

Mini3-G3-B

JEITA SC-59A

Parameter Symbol Rating

Operating ambient temperature Topr -40 to

Collector-base voltage (Emitter open) VCBO

Collector-emitter voltage (Base open)

2.8

2.9

1.1

1.5

0.4

1.9

0.16

(0.95)(0.95)

Doc No.

TT4-EA-11742

Revision.

Established

2009-10-29

Revised

2014-03-18

Summary of content (4 pages)

PAGE 1
Doc No. TT4-EA-11742 Revision. 3 Product Standards Transistors with Built-in Resistor DRC2123J0L DRC2123J0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA2123J 2.9 0.4 0.16 3  Features 1.5 2.8  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1  Marking Symbol: N4 (0.95)(0.95) 1.9  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1.
PAGE 2
Doc No. TT4-EA-11742 Revision. 3 Product Standards Transistors with Built-in Resistor DRC2123J0L Technical Data ( reference ) PT - Ta IC - VCE 250 0.12 150 100 50 300 μA 0.08 250 μA 200 μA 0.06 150 μA 0.04 100 μA 0.02 50 μA 0 0 0 20 40 60 80 100 120 140 160 180 200 0 2 4 hFE - IC 8 10 12 VCE(sat) - IC 10 450 IC/IB = 20 VCE = 10 V 400 350 Ta = 85 ℃ 300 250 25 ℃ 200 150 -40 ℃ 100 50 0 0.0001 0.001 0.01 0.
PAGE 3
Doc No. TT4-EA-11742 Revision. 3 Product Standards Transistors with Built-in Resistor DRC2123J0L Mini3-G3-B Unit: mm +0.20 2.90-0.05 +0.10 0.16-0.06 +0.10 0.40-0.05 (5°) +0.2 2 1.9±0.1 0.4±0.2 (0.95) (0.95) (0.65) 1 2.8-0.3 +0.25 1.50-0.05 3 +0.3 1.1-0.1 +0.2 0 to 0.1 1.1-0.1 (10°)  Land Pattern (Reference) (Unit: mm) 2.4 1.0 1.0 1.
PAGE 4
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.