Datasheet

Product Standards
Transistors with Built-in Resistor
DRC2114E0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
Collector-base voltage (Emitter open) VCBO
50 V
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Parameter Symbol Rating
Operating ambient temperature Topr -40 to
000
TO-236AA/SOT-23
pcs / reel (standard)
Emitter
+85 °C
Unit
Panasonic
50 V
 Marking Symbol:
NB
Code
1. Base
2.
Embossed type (Thermo-compression sealing) : 3
DRC2114E0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA2114E
 Features
 Packaging
Mini3-G3-B
3. Collector
10
k



Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
JEITA SC-59A
Internal Connection
Resistance
value
1of
R1 10
k

R2
100 mA
3
Unit: mm
Min Typ
Collector-emitter voltage (Base open) VCEO
Total power dissipation PT
Collector current IC
-55 to
200 mW
Junction temperature Tj 150 °C
V
+150 °C
Parameter Symbol Conditions
Storage temperature Tstg
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0 50
Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50
V
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0 0.1 μA
μA
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0 0.5 mA
Collector-emitter cutoff current (Base open)
ICEO
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 35
0.5 VCE = 50 V, IB = 0
-
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA0.8V
2.1 V
Input resistance
R1 -30% 10 +30%
k

Resistance ratio
R1/R2 0.8 1.0 1.2 -
2.8
2.9
1.1
1.5
0.4
1.9
0.16
1
3
(0.95)(0.95)
2
C
B
R
1
R
2
E
Doc No.
TT4-EA-11644
Revision.
3
Established
:
2009-10-21
Revised
:
2014-03-13