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Product Standards
Transistors with Built-in Resistor
DRA5144T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
1.
2.
3.
Parameter Symbol Rating Unit
SC-85
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Marking Symbol:
LP
Code
Base
Emitter
―
Panasonic
Packaging
SMini3-F2-B
JEITA
DRA5144T0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5144T
DRA2144T in SMini3 type package
Features
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High hFE with excellent linearity
Collector
Unit: mm
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO -50 V
Collector-emitter voltage (Base open) VCEO -50 V
Collector current IC -100 mA
Total power dissipation PT 150 mW
Symbol Conditions
Storage temperature Tstg -55 to
Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50 V
Parameter
Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V
Collector-base cutoff current (Emitter open)
ICBO VCB = -50 V, IE = 0 -0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = -50 V, IB = 0 -0.5 μA
Emitter-base cutoff current (Collector open)
IEBO VEB = -6 V, IC = 0 -0.01 mA
Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 160 460 -
Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V
Input voltage
Vi(on) VCE = -0.2 V, IC = -5 mA
Vi(off) VCE = -5 V, IC = -100 μA
-2.8 V
-0.4 V
47 +30%
k
Input resistance R1 -30%
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
R1
47
k
+150 °C
Junction temperature Tj 150 °C
+85 °COperating ambient temperature Topr -40 to
C
B
R
1
E
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
Doc No.
TT4-EA-11589
Revision.
3
Established
:
Revised
:

Summary of content (4 pages)