Datasheet

Product Standards
Schottky Barrier Diode
DB4X501K0R
 Electrical Characteristics Ta = 25 C  3 C
Note: 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031
measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 000 MHz.
4. *1 : trr measurement circuit
Page
Terminal capacitance Ct
VR = 10 V, f = 1 MHz
Reverse recovery time
*1
trr
0.36
IR
VR = 50 V
VF1
IF = 30 mA
4
of 4
Min Typ
200
2
pF
Parameter Symbol Conditions UnitMax
μA
Reverse current
Forward voltage
VF2
IF = 200 mA
0.55
V
ns
IF = IR = 100 mA
1.6
Irr = 10 mA, RL = 100

Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Doc No.
TT4-EA-12390
Revision.
3
Established
:
2010-02-22
Revised
:
2013-12-13