Datasheet

ManualsBrandsPANASONIC ManualsRectifiersDB3S406F0L

Product Standards

Schottky Barrier Diode

DB3S406F0L

 Absolute Maximum Ratings Ta = 25 °C

Note: *1 The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

Page

Internal ConnectionV

Code SOT-490

Reverse voltage

Forward current

Singie

Series

Parameter Symbol

300

225

IFM

forward surge current

Peak forward current

Singie

Series

 Basic Part Number :

Dual DB2S406 (Series)

Repetitive peak reverse voltage VRRM 40

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

Panasonic SSMini3-F3-B

JEITA SC-89

DB3S406F0L

Silicon epitaxial planar type

For high speed switching circuits

 Features

Short reverse recovery time trr

Small reverse current IR

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol:

3. Cathode11. Anode1

2. Cathode2 Anode2

Unit: mm

1of4

Unit

°C

Rating

Junction temperature Tj 125

IFSM

0.75

100

Non-repetitive peak Singie

+125Storage temperature Tstg

-40 toToprOperating ambient temperature

-55 to

+85

1.6

0.7

0.85

0.130.26

(0.5)

1.0

(0.5)

Doc No.

TT4-EA-12479

Revision.

Established

2010-03-24

Revised

2013-12-13

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L DB3S406F0L Silicon epitaxial planar type Unit: mm For high speed switching circuits 1.6 0.26 Features 0.13 3 0.85 1.6 y Small reverse current IR y Short reverse recovery time trr y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Marking Symbol: 4V 0.7 (0.5) (0.5) 1.0 Basic Part Number : Dual DB2S406 (Series) 1. Anode1 2.
PAGE 2
Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L Electrical Characteristics Ta = 25 °C ± 3 °C Parameter Symbol VF IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time Note: *1 trr Conditions Min IF = 100 mA VR = 40 V VR = 10 V, f = 1 MHz IF = IR = 100 mA, Irr = 10 mA RL = 100 Ω Typ Max Unit 0.6 5 2.2 V µA pF 0.9 ns 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2.
PAGE 3
Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L Technical Data ( reference ) IF - VF IR - VR 1.0E-02 1.0E-03 Ta = 125 ℃ 1.0E-01 Reverse current (A) Forward voltage IF (A) 1.0E+00 85 ℃ 1.0E-02 1.0E-03 25 ℃ 1.0E-04 -40 ℃ Ta = 125 ℃ 1.0E-04 1.0E-05 85 ℃ 1.0E-06 25 ℃ 1.0E-07 -40 ℃ 1.0E-08 1.0E-09 1.0E-10 1.0E-05 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.
PAGE 4
Doc No. TT4-EA-12479 Revision. 2 Product Standards Schottky Barrier Diode DB3S406F0L SSMini3-F3-B Unit: mm +0.05 1.60-0.03 +0.05 0.13-0.02 +0.05 0.26-0.02 (5°) 2 (0.5) (0.5) 1.00±0.05 0.375±0.050 1 1.60±0.05 +0.05 0.85-0.03 3 0 to 0.1 (0.45) +0.05 0.70-0.03 (5°) Land Pattern (Reference) (Unit: mm) 1.4 0.6 0.6 1.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.