Datasheet

ManualsBrandsPANASONIC ManualsDiodesSchottky Diode

Product Standards

Schottky Barrier Diode

DB2232000L

 Absolute Maximum Ratings Ta = 25 C

Note: *1 50 Hz sine wave 1 cycle (Non-repetitive peak current)

Page

1.5

+125-55Tstg

Non-repetitive peak forward surge current

IFSM

Storage temperature

Junction temperature

Repetitive peak reverse voltage VRRM 30

 Packaging

Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)

DB2232000L

Silicon epitaxial planar type

For rectification

 Features

Low forward voltage VF

Halogen-free / RoHS compliant

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol:



41of

Small reverse leakage current

Code

1. Cathode

SOD-123

Unit: mm

Symbol Rating

Internal Connection

2. Anode

Panasonic Mini2-F4-B

JEITA SC-109D

°C

125 °C

UnitParameter

VReverse voltage VR 30

Peak forward current IF(AV)

+85 °COperating ambient temperature Topr -40 to

3.5

1.6

0.8

2.6

0.55

0.13

Doc No.

TT4-EA-12656

Revision.

Established

2010-07-22

Revised

2013-04-19

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12656 Revision. 3 Product Standards Schottky Barrier Diode DB2232000L DB2232000L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2  Features 2.6 3.5  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1  Marking Symbol: B5 0.55 0.
PAGE 2
Doc No. TT4-EA-12656 Revision. 3 Product Standards Schottky Barrier Diode DB2232000L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol VF1 VF2 VF3 IR Ct Forward voltage Reverse current Terminal capacitance Reverse recovery time *1 trr Conditions Min IF = 0.5 A IF = 1.0 A IF = 1.5 A VR = 30 V VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1×IR, RL = 100  Typ Max Unit 0.38 0.42 0.46 100 48 V V V μA pF 16 ns Note) 1.
PAGE 3
Doc No. TT4-EA-12656 Revision. 3 Product Standards Schottky Barrier Diode DB2232000L Technical Data ( reference ) IR - VR IF - VF 1.E-01 Ta = 125 °C Ta = 125 °C 1.E+00 Reverse current IR (A) Forward current IF (A) 1.E+01 85 °C 1.E-01 1.E-02 25 °C 1.E-03 1.E-04 -40 °C 1.E-05 0.0 1.E-02 85 °C 1.E-03 1.E-04 25 °C 1.E-05 -40 °C 1.E-06 1.E-07 1.E-08 0.1 0.2 0.3 0.4 0.
PAGE 4
Doc No. TT4-EA-12656 Revision. 3 Product Standards Schottky Barrier Diode DB2232000L Mini2-F4-B Unit: mm 1.6±0.1 +0.05 0.13-0.02 (7°) 3.5±0.1 2.6±0.1 2 0 to 0.1 (7°) 0 to 0.3 0.80±0.05 0.55±0.10 0.45±0.10 1  Land Pattern (Reference) (Unit: mm) 0.8 3.1 0.8 1.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.