Datasheet

GU SOP 1 Form B (AQY41S)
1
ds_x615_en_aqy41s: 011212J
TYPES
* Indicate the peak AC and DC values.
Note: For space reasons, the three initial letters of the part number “AQY”, the surface mount terminal shape indicator “S” and the packing style indicator “X” or “Z” are not
marked on the relay. (Ex. the label for product number AQY412SX is 412)
RATING
1. Absolute maximum ratings (Ambient temperature: 25C 77F)
Normally closed
SOP4-pin type
of 60V/350V/400V
load voltage
GU SOP 1 Form B
(AQY41S)
Output rating*
Package
Part No. Packing quantity
Load
voltage
Load
current
Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2-pin side
Picked from the
3/4-pin side
AC/DC
dual use
60V 500mA
SOP4-pin
AQY412S AQY412SX AQY412SZ
1 tube contains:
100 pcs.
1 batch contains:
2,000 pcs.
1,000 pcs.350V 120mA AQY410S AQY410SX AQY410SZ
400V 100mA AQY414S AQY414SX AQY414SZ
Item Symbol AQY412S AQY410S AQY414S Remarks
Input
LED forward current I
F 50 mA
LED reverse voltage VR 5 V
Peak forward current IFP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Output
Load voltage (peak AC) VL 60 V 350 V 400 V
Continuous load current IL 0.5 A 0.12 A 0.1 A Peak AC, DC
Peak load current Ipeak 1.5 A 0.3 A 0.24 A 100ms (1 shot), VL = DC
Power dissipation Pout 300 mW
Total power dissipation PT 350 mW
I/O isolation voltage Viso 1,500 V AC
Temperature
limits
Operating T
opr –40C to +85C –40F to +185F Non-condensing at low temperatures
Storage Tstg –40C to +100C –40F to +212F
(AQY412S) (AQY410S, 414S)
VDE
mm inch
FEATURES
1. Small SOP4-pin package
The device comes in a super-miniature
SO package 4-pin type measuring
(W) 4.3(L) 4.4(H) 2.1 mm (W) .169(L)
.173(H) .083 inch
2. Low on-resistance
The AQ4 series (normally closed type)
has a low on-resistance.
This has been achieved thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
3. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
4. Low-level off-state leakage current
of max. 1 A
TYPICAL APPLICATIONS
• Power supply
• Measuring instruments
• Security equipment
• Telephone equipment
• Sensing equipment
4.4
2.1
4.3
.173
.083
.169
CAD Data
CAD Data
1
2
4
3
Source electrode
N
-
N
+
N
+
N
+
P
+
N
+
N
+
P
+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
AQY41S