Datasheet

GU-E PhotoMOS (AQW21PEH)
4
ds_x615_en_aqw21eh: 181206J
9-(2). Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25°C 77°F
10. Turn on time vs. LED forward current
characteristics
Sample: All types
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
11. Turn off time vs. LED forward current
characteristics
Sample: All types
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
806040200 100
AQW216EH
AQW212EH
10
-13
10
-11
10
-9
10
-7
10
-5
10
-3
Off state leakage current, A
Load voltage, V
0
0.5
1
1.5
2
3
2.5
10 20 30 40
50 60
AQW210EH
AQW214EH
Turn on time, ms
LED forward current, mA
AQW216EHAQW212EH
0
0.05
0.1
100203040
0.2
50 60
0.15
AQW216EH
AQW212EH
AQW210EH
AQW214EH
Turn off time, ms
LED forward current, mA
12-(1). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
12-(2). Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
0
50
40
30
20
10
10 20 30 40 500
AQW216EH
Output capacitance, pF
Applied voltage, V
AQW210EH
AQW214EH
0
50
100
150
200
020530251510
AQW212EH
Output capacitance, pF
Applied voltage, V