Datasheet

ManualsBrandsPanasonic ManualsMOSFET RelaysPhotoMOS relay AQV PhotoMOS AQV, DIP-6, SPST-NC, 60V, 550mA

GU-E 1 Form B (AQV414E, AQV41EH)

ds_x615_en_aqv414e_aqv41eh: 011212J

TYPES

*Indicate the peak AC and DC values.

Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the relay.

RATING

Normally closed DIP6-pin

economic type with

reinforced insulation

GU-E 1 Form B

(AQV414E, AQV41EH)

I/O isolation

voltage

Output rating*

Package

Part No.

Packing quantity

Through hole

terminal

Surface-mount terminal

Load

voltage

Load

current

Tube packing style

Tape and reel packing style

Tube Tape and reel

Picked from the

1/2/3-pin side

Picked from the

4/5/6-pin side

AC/DC

dual use

1,500 V AC

(Standard)

400 V 120 mA

DIP6-pin

AQV414E AQV414EA AQV414EAX AQV414EAZ

1 tube contains:

50 pcs.

1 batch contains:

500 pcs.

1,000 pcs.

5,000 V AC

(Reinforced)

60 V 550 mA AQV412EH AQV412EHA AQV412EHAX AQV412EHAZ

350 V 130 mA AQV410EH AQV410EHA AQV410EHAX AQV410EHAZ

400 V 120 mA AQV414EH AQV414EHA AQV414EHAX AQV414EHAZ

(Reinforced type)(Standard type)

(AQV410EH, 414EH)

VDE

(AQV412EH)

VDE

(AQV410EH, 414EH)

mm inch

FEATURES

1. High cost-performance type of

PhotoMOS 1 Form B output

2. 60V type couples high capacity

(0.55A) with low on-resistance (typ. 1).

3. Low on-resistance

This has been realized thanks to the

built-in MOSFET processed by our

proprietary method, DSD (Double-

diffused and Selective Doping) method.

4. Controls low-level analog signals

PhotoMOS relays feature extremely low

closed-circuit offset voltage to enable

control of low-level analog signals without

distortion.

5. High sensitivity and low on-

resistance

Can control max. 0.55 A load current with

5 mA input current.

Low on-resistance of typ. 1

(AQV412EH).

6. Low-level off-state leakage current

of max. 1 A (AQV414E)

7. Reinforced insulation 5,000 V type

also available

More than 0.4 mm internal insulation

distance between inputs and outputs.

Conforms to EN41003, EN60950

(reinforced insulation).

TYPICAL APPLICATIONS

• Power supply

• Measuring equipment

• Security equipment

• Telephone equipment

• Sensing equipment

8.8

6.4

3.6

8.8

6.4

3.9

.346

.252

.142

.346

.252

.154

CAD Data

Source electrode

Gate electrode

Passivation membrane

Cross section of the normally-closed type of

power MOS

Intermediate

insulating

membrane

Gate

oxidation

membrane

Drain

electrode

1. Absolute maximum ratings (Ambient temperature: 25C 77F)

Item Symbol

Type of

connection

AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A)

Remarks

Input

LED forward current I

F 50 mA

LED reverse voltage VR 5 V

Peak forwrd current IFP 1 A f = 100 Hz, Duty factor = 0.1%

Power dissipation Pin 75 mW

Output

Load voltage (peak AC) VL 400 V 60 V 350 V 400 V

Continuous load

current

A 0.12 A 0.55 A 0.13 A 0.12 A

A connection: Peak AC, DC

B,C connection: DC

B 0.13 A 0.65 A 0.15 A 0.13 A

C 0.15 A 0.8 A 0.17 A 0.15 A

Peak load current I

peak 0.3 A 1.5 A 0.4 A 0.3 A A connection: 100 ms (1 shot), VL = DC

Power dissipation Pout 500 mW

Total power dissipation PT 550 mW

I/O isolation voltage Viso 1,500 V AC 5,000 V AC

Temperature

limits

Operating Topr –40C to +85C –40F to +185F Non-condensing at low temperatures

Storage Tstg –40C to +100C –40F to +212F

AQV414E,

Summary of content (4 pages)

PAGE 1
GU-E 1 Form B (AQV414E, AQV41EH) VDE (AQV412EH) VDE (Standard type) Normally closed DIP6-pin economic type with reinforced insulation (AQV410EH, 414EH) (AQV410EH, 414EH) (Reinforced type) GU-E 1 Form B (AQV414E, AQV41EH) AQV414E, FEATURES 3.9 .154 6.4 .252 8.8 .346 5. High sensitivity and low onresistance Can control max. 0.55 A load current with 5 mA input current. Low on-resistance of typ. 1 (AQV412EH). 6. Low-level off-state leakage current of max. 1 A (AQV414E) 7.
PAGE 2
GU-E 1 Form B (AQV414E, AQV41EH) 2. Electrical characteristics (Ambient temperature: 25C 77F) Item Symbol Typical LED operate (OFF) current Input Maximum Minimum Typical Typical Maximum LED reverse (ON) current LED dropout voltage Type of connection IFoff — IFon — VF — Ron A Initial I/O isolation resistance IL = Max. IF = 50 mA 1.5 V 1 18  25.2  2.5  35  50  0.55  13  19  25  1.3  17.5  25  10  0.3  6.5  10  12.5  0.7  8.8  12.
PAGE 3
GU-E 1 Form B (AQV414E, AQV41EH) REFERENCE DATA 1-(1). Load current vs. ambient temperature characteristics 1-(2). Load current vs. ambient temperature characteristics 2. On resistance vs. ambient temperature characteristics Allowable ambient temperature: –40C to +85C –40F to +185F Type of connection: A Allowable ambient temperature: –40C to +85C –40F to +185F Type of connection: A Measured portion: between terminals 4 and 6; LED current: 0 mA; Load voltage: Max.
PAGE 4
GU-E 1 Form B (AQV414E, AQV41EH) 8-(2). Current vs. voltage characteristics of output at MOS portion 9. Off state leakage current vs. load voltage characteristics 10.Operate (OFF) time vs. LED forward current characteristics Measured portion: between terminals 4 and 6; Ambient temperature: 25C 77F Sample: All types; Measured portion: between terminals 4 and 6; LED current: 5 mA; Ambient temperature: 25C 77F Measured portion: between terminals 4 and 6; Load voltage: Max.