Datasheet

ManualsBrandsOSRAM ManualsPhotodiodes & PhototransistorsPhototransistor TO 18 1130 nm 55 °

2014-01-14 1

201 4- 01- 1 4

Silicon NPN Phototransistor

NPN-Silizium-Fototransistor

Version 1.1

BP 103

Ordering Information

Bestellinformation

Features: Besondere Merkmale:

• Spectral range of sensitivity: (typ) 450 ... 1100

• Spektraler Bereich der Fotoempfindlichkeit:

(typ) 450 ... 1100 nm

• Package: Metal Can (TO-18), hermetically sealed,

Epoxy

• Gehäuse: Metall Gehäuse (TO-18), hermetisch

dicht, Harz

• Special: Base connection • Besonderheit: Basisanschluss

• High linearity • Hohe Linearität

Applications Anwendungen

• Photointerrupters • Lichtschranken

• Industrial electronics • Industrieelektronik

• For control and drive circuits • Messen / Steuern / Regeln

• Computer-controlled flashes • Computer-Blitzlichtgeräte

Type: Photocurrent Ordering Code

Typ: Fotostrom Bestellnummer

λ = 950 nm, E

= 0.5 mW/cm

, V

= 5 V

PCE

[µA]

BP 103 > 80 Q62702P0075

BP 103-3/4 125 ... 400 Q62702P3577

Note: Only one bin within one packing unit (variation less than 2:1)

Anm.: Nur eine Gruppe pro Verpackungseinheit (Streuung kleiner 2:1)

Summary of content (11 pages)

PAGE 1
2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 BP 103 Features: Besondere Merkmale: • Spectral range of sensitivity: (typ) 450 ... 1100 nm • Package: Metal Can (TO-18), hermetically sealed, Epoxy • Special: Base connection • High linearity • Spektraler Bereich der Fotoempfindlichkeit: (typ) 450 ...
PAGE 2
Version 1.1 BP 103 Maximum Ratings (TA = 25 °C) Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range Betriebs- und Lagertemperatur Top; Tstg -40 ...
PAGE 3
Version 1.1 BP 103 Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent of collector-base photodiode Fotostrom der Kollektor-Basis-Fotodiode (EV = 1000 lx, Std. Light A, VCE = 5 V) IPCB 3 μA Capacitance Kapazität (VCE = 0 V, f = 1 MHz, E = 0) CCE 7.
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Version 1.1 BP 103 Grouping (TA = 25 °C, λ = 950 nm) Gruppierung Group Min Photocurrent Max Photocurrent Typ Photocurrent Rise and fall time Gruppe Min Fotostrom Max Fotostrom Typ Fotostrom Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, VCE = 5 V EV = 1000 lx, Std.
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Version 1.1 BP 103 Directional Characteristics Winkeldiagramm Srel = f(ϕ) (0 3) .04 5) .03 (0 0.9 3.6 (0.142) 12.5 (0.492) 3.0 (0.118) (0 1.1 1.1 14.5 (0.571) E C B 2.54 (0.100) spacing ø0.45 (0.018) 0.9 (2.7 (0.106)) ø4.3 (0.169) ø4.1 (0.161) Radiant sensitive area Chip position (0 .04 .03 3) 5) Package Outline Maßzeichnung ø5.5 (0.217) ø5.2 (0.205) GETY6017 Dimensions in mm (inch). / Maße in mm (inch).
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Version 1.1 BP 103 TTW Soldering Wellenlöten (TTW) IEC-61760-1 TTW / IEC-61760-1 TTW OHA04645 300 10 s max., max. contact time 5 s per wave ˚C T 250 235 ˚C - 260 ˚C First wave Second wave Continuous line: typical process Dotted line: process limits ΔT < 150 K 200 Cooling Preheating ca. 3.5 K/s typical 150 ca. 2 K/s 130 ˚C 120 ˚C 100 ˚C 100 ca.
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Version 1.1 BP 103 Disclaimer Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet. Packing Please use the recycling operators known to you.