Datasheet

SFH 4180S
3
Version 1.0 | 2019-08-22
Characteristics
I
F
= 1000 mA; t
p
= 10 ms; T
A
= 25 °C
Parameter Symbol Values
Peak wavelength λ
peak
typ. 950 nm
Centroid wavelength λ
centroid
typ. 940 nm
Spectral bandwidth at 50% I
rel,max
(FWHM) ∆λ typ. 37 nm
Half angle φ typ. 65 °
Dimensions of chip area L x W typ. 0.75 x 0.75
mm x mm
Rise time (10% / 90%)
I
F
= 2 A; R
L
= 5 Ω
t
r
typ. 9 ns
Fall time (10% / 90%)
I
F
= 2 A; R
L
= 5 Ω
t
f
typ. 16 ns
Forward voltage V
F
typ.
max.
2.95 V
3.3 V
Forward voltage
I
F
= 2 A; t
p
= 100 µs
V
F
typ.
max.
3.4 V
4.0 V
Reverse current
2)
V
R
= 5 V
I
R
typ.
max.
0.01 µA
10 µA
Radiant intensity I
e
typ. 280 mW/sr
Temperature coe󰘲cient of voltage TC
V
typ. -2 mV / K
Temperature coe󰘲cient of brightness TC
I
typ. -0.3 % / K
Temperature coe󰘲cient of wavelength TC
λ
typ. 0.3 nm / K
Thermal resistance junction solder point electrical
3)
with e󰘲ciency η
e
= 38 %
R
thJS elec.
typ.
max.
6.8 K / W
8.1 K / W
Thermal resistance junction solder point real
3)
R
thJS
typ.
max.
11.0 K / W
13.0 K / W