Datasheet

SFH 4949
3
Version 1.2 | 2018-05-25
Characteristics
I
F
= 40 mA; t
p
= 20 ms; T
A
= 25 °C
Parameter Symbol Values
Number of emitters n 9
Dimension “B” (see drawing) l min.
max.
22.3 mm
22.7 mm
Peak wavelength
λ
peak
typ. 950 nm
Centroid wavelength
λ
centroid
typ. 940 nm
Spectral bandwidth at 50% I
rel,max
∆λ
typ. 42 nm
Half angle
φ
typ. 10 °
Dimensions of active chip area L x W typ. 0.3 x 0.3
mm x mm
Distance chip surface to lens top H min.
max.
1.3 mm
1.9 mm
Rise time (10% / 90%)
I
F
= 40 mA; R
L
=50Ω
t
r
typ. 12 ns
Fall time (10% / 90%)
I
F
= 40 mA; R
L
=50Ω
t
f
typ. 12 ns
Forward voltage V
F
typ.
max.
1.35 V
1.7 V
Forward voltage
I
F
= 1 A; t
p
=100µs
V
F
typ.
max.
3.6 V
4.6 V
Reverse current
2)
V
R
= 5 V
I
R
max.
typ.
10µA
0.01µA
Totalradiant󰘱ux
3)
Φ
e
typ. 30 mW
Radiant intensity
1)
I
F
= 1 A; t
p
=40µs
I
e
typ. 520 mW/sr
Temperaturecoe󰘲cientofbrightness TC
I
typ. -0.3 % / K
Temperaturecoe󰘲cientofvoltage TC
V
typ. -0.8 mV / K
Temperaturecoe󰘲cientofwavelength
TC
λ
typ. 0.3 nm / K
Thermal resistance junction ambient real
4)
R
thJA
max. 750 K / W
Thermal resistance junction solder point real
5)
R
thJS
max. 650 K / W